maximum ratings: (t a =25c) symbol 2n5193 2n5194 2N5195 units collector-base voltage v cbo 40 60 80 v collector-emitter voltage v ceo 40 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 4.0 a base current i b 1.0 a power dissipation (t c =25c) p d 40 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance (junction to case) jc 3.12 c/w electrical characteristics: (t c =25c) symbol test conditions min max units i cbo v cb =rated v cbo 100 a i cex v ce =rated v ceo , v eb =1.5v 100 a i ceo v ce =rated v ceo 1.0 ma i ebo v eb =5.0v 1.0 ma bv ceo i c =100ma (2n5193) 40 v bv ceo i c =100ma (2n5194) 60 v bv ceo i c =100ma (2N5195) 80 v v ce(sat) i c =1.5a, i b =150ma 0.6 v v ce(sat) i c =4.0a, i b =1.0a 1.4 v v be(on) v ce =2.0v, i c =1.5a 1.2 v h fe v ce =2.0v, i c =1.5a (2n5193, 2n5194) 25 100 h fe v ce =2.0v, i c =1.5a (2N5195) 20 80 h fe v ce =2.0v, i c =4.0a (2n5193, 2n5194) 10 h fe v ce =2.0v, i c =4.0a (2N5195) 7.0 f t v ce =10v, i c =1.0a, f=1.0mhz 2.0 mhz 2n5193 2n5194 2N5195 pnp silicon power transistors to-126 case central semiconductor corp. tm r1 (10-february 2009) description: the central semiconductor 2n5193 series types are silicon pnp power transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications. these devices are complementary to the npn 2n5190 series types. marking: full part number
central semiconductor corp. tm 2n5193 2n5194 2N5195 pnp silicon power transistors r1 (10-february 2009) to-126 case - mechanical outline lead code: 1) emitter 2) collector 3) base marking: full part number
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